ESREF2017 CONFERENCE PROGRAMME

Monday, September 25


		Tutorial
		Auditorium BRISBANE
chairpersons		H. FREMONT N. LABAT
08:50		Simulation of packaging under harsh environment conditions (temperature, pressure, corrosion and radiation) K. Weide-Zaage RESRI Group, Institute of Microelectronic Systems (IMS), Leibniz Universität Hannover, 30167 Hannover

10:30		Coffee Break

		Tutorial
		Auditorium BRISBANE
chairpersons		H. FREMONT K. WEIDE-ZAAGE
10:50		The impacts of EMC/ESD on embedded systems: a challenge for safe systems achievement G. Duchamp², F. Caignet¹ ¹LAAS-CNRS, ²Université de Bordeaux, Laboratoire IMS

12:30		Lunch

14:00		Official opening of ESREF 2017 Auditorium BRISBANE

Session K		Key note paper
		Auditorium BRISBANE
chairpersons		N. LABAT F. MARC
14:20		Invited paper Enabling robust automotive electronic components in advanced CMOS nodes V. Huard^a,b, S. Mhira^a,b, F. Cacho^a, A. Bravaix^b ^aSTMicroelectronics, Technology and Design Platform, 38926 Crolles, France, ^bEER, IM2NP-ISEN, UMR-CNRS, 7334 maison des technologies, 83000, France

Session IPFA		Best Paper IPFA
		Auditorium BRISBANE
chairpersons		N. LABAT M. BAFLEUR
15:00		Invited paper A Simple Method to Identify Metastable States in Random Telegraph Noise Zhenghan Lin, Shaofeng Guo, Runsheng Wang, Dongyuan Mao, Ru Huang, Peking University, China

Session IRPS		Best Paper IRPS
		Auditorium BRISBANE
chairpersons		N. LABAT M. BAFLEUR
15:20		Invited paper Robust Automotive Products in Advanced CMOS Nodes Vincent Huard, Souhir Mhira, M. De Tomasi, E. Trabace, R. E. Vaion, P. Zabberoni, Stmicroelectronics

15:40		Coffee Break

Session E1		Interconnections & new failure modes
		Auditorium BRISBANE
chairpersons		A. GUEDON-GRACIA R. RONGEN
16:00		Invited paper Review of the impact of microstructure of lead-free solder joints on assessment of fatigue lives of the solder joints by simulations and thermal cycling tests P.-E. Tegehall Swerea IVF, Sweden
16:40	E1-1 #180	Isothermal bending fatigue response of solder joints in high power semiconductor test structures A. Betzwar Kotas, G. Khatibi Christian Doppler Laboratory for Lifetime and Reliability of Interfaces in Complex Multi-Material Electronics, Chemical Technologies and Analytics, TU Wien, Getreidemarkt 9/CT-164, 1060 Vienna, Austria
17:00	E1-2 #112	High temperature ageing of microelectronics assemblies with SAC solder joints W. Sabbah^b, P. Bondue^a, O. Avino-Salvado^b, C. Buttay^b, H. Frémont^a, A. Guédon-Gracia^a, H. Morel^b ^aUniversity of Bordeaux, IMS Laboratory, UMR 5218, Talence F-33405, France, ^bUniv Lyon, INSA-Lyon, CNRS, Laboratoire Ampére UMR 5005, Lyon, F-69621, France
17:20	E1-3 #84	Combined creep characterisation from single lap shear tests and 3D implementation for fatigue simulations S. Pin^a, H. Frémont^b, A. Guédon-Gracia^b ^aInstitut de Recherche Technologique Saint-Exupéry, 118 Route de Narbonne, 31432 Toulouse, France, ^bLaboratoire IMS, University of Bordeaux, Talence, France
17:40	E1-4 #195	Wire bond degradation under thermo- and pure mechanical loading K. B. Pedersen^a, D. A. Nielsen^a, B. Czerny^b, G. Khatibi^b, F. Iannuzzo^c, V. N. Popok^a, K. Pedersen^a ^aDepartment of Materials and Production, Aalborg University, Skjernvej 4A, 9220 Aalborg Øst, Denmark, ^bChristian Doppler Laboratory for Lifetime and Reliability of Interfaces in Complex Multi-Material Electronics, Chemical Technologies and Analytics, TU Wien, Getreidemarkt 9/CT-164, 1060 Vienna, Austria, ^cDepartment of Energy Technology, Aalborg University, Pontoppidanstraede 111, 9220 Aalborg Øst, Denmark

18:00		Cocktail offered by Exhibitors

Tuesday, September 26


Session F1		Interconnection reliability
		Auditorium BRISBANE
chairpersons		L. THEOLIER M. CIAPPA
08:30		Invited paper Qualification Extension of Automotive Smart Power and Digital ICs to Harsh Aerospace Mission Profiles: Gaps and Opportunities R. Enrici Vaion¹, M. Medda¹, A. Pintus¹, A. Mancaleoni¹, G. Mura², M. De Tomasi² ¹STMicroelectronics, Agrate Brianza, ²University of Cagliari
09:10	F1-1 #118	Lifetime of power electronics interconnections in accelerated test conditions: High temperature storage and thermal cycling W. Sabbah^b, F. Arabi^a, O. Avino-Salvado^b, C. Buttay^b, L. Théolier^a, H. Morel^b ^aUniversity of Bordeaux, IMS Laboratory, UMR 5218, F-33405 Talence, France, ^bUniv Lyon, INSA-Lyon, CNRS, Laboratoire Ampére, UMR 5005, F-69621 Lyon, France
09:30	F1-2 #162	Laser cuts increase the reliability of heavy-wire bonds and enable on-line process control using thermography A. Middendorf^a, A. Grams^a, S. Janzen^a, K.-D. Lang^a,b, O. Wittler^a ^aFraunhofer Institut für Zuverlässigkeit und Mikrointergation, 13355 Berlin, Germany, ^bForschungsschwerpunkt Technologien der Mikroperipherik, Technische Universität Berlin, 13355 Berlin, Germany
09:50	F1-3 #55	Highly variable Sn-Cu diffusion soldering process for high performance power electronics D. Feil^a, T. Herberholz^a, M. Guyenot^a, M. Nowottnick^b ^aRobert Bosch GmbH, Robert-Bosch-Campus 1, 71272 Renningen, Germany, ^bInstitute for Electronic Appliances and Circuits, University of Rostock, 18059 Rostock, Germany
10:10	F1-4 #124	Reliability investigation of the copper-zinc system for solid diffusion bonding in power modules F. Dugal^a, M. Ciappa^b ^aABB Switzerland Ltd, Semiconductor, Fabrikstrasse 3, CH-5600 Lenzburg, Switzerland, ^bETH Zurich, Integrated System Laboratory, CH-8092 Zurich, Switzerland

Session H		MEMS reliability
		Room Brasilia 2 et 3
chairpersons		G. PAPAIOANNOU C. POULAIN
09:10	H-1 #71	Electrical properties of SiNx films with embedded CNTs for MEMS capacitive switches M. Koutsoureli^a, G. Stavrinidis^b, D. Birmpiliotis^a, G. Konstantinidis^b, G. Papaioannou^a ^aPhysics Department, University of Athens, 15784 Panepistimioupolis, Athens, Greece, ^bIESL – FORTH, GR-71110 Heraklion, Greece
09:30	H-2 #154	Application of multiplicative dimensional reduction method for uncertainty quantification and sensitivity analysis of MEMS electrostatic actuators P. L. T. Duong^a, T. T. Tran^b, N. Raghavan^a ^aEngineering Product Development (EPD) Pillar, Singapore University of Technology and Design, 487 372, Singapore, ^bFaculty of Electronic Technology, Industrial University of Ho Chi Minh City, Vietnam
09:50	H-3 #226	Long-term stresses on linear micromirrors for pico projector application M. Silvestrini^a, M. Barbato^a, S. Costantini^b, L. Castoldi^b, F. Vercesi^b, L. Zanotti^b, G. Meneghesso^a ^aDepartment of Information Engineering, University of Padova, Via Gradenigo 6/B, 35131 Padova, Italy, ^bSTMicroelectronics, via C.Olivetti 2, 20864 Agrate Brianza, MB, Italy
10:10	H-4 #72	Temperature accelerated discharging processes through the bulk of PECVD silicon nitride films for MEMS capacitive switches M. Koutsoureli, N. Siannas, G. Papaioannou Solid State Physics Section, Physics Department, National and Kapodistrian University of Athens, Panepistimioupolis Zografos, Athens 15784, Greece

09:10		Exhibitors flash presentations Room Brasilia 1

10:30		Coffee Break

Session F2		Model & simulations
		Auditorium BRISBANE
chairpersons		P. TOUNSI M. CIAPPA
10:50	F2-1 #58	Modelling of the shoot-through phenomenon introduced by the next generation IGBT in inverter applications S. Abe^a, K. Hasegawa^a, M. Tsukuda^b, K. Wada^c, I. Omura^a, T. Ninomiya^b ^aDepartment of Life Science and System Engineering, Kyushu Institute of Technology, Kitakyushu, Japan, ^bGreen Electronics Research Institute, Kitakyushu, Japan, ^cDepartment of Electrical and Electronic Engineering, Tokyo Metropolitan University, Tokyo, Japan
11:10	F2-2 #89	Impact of the gate driver voltage on temperature sensitive electrical parameters for condition monitoring of SiC power MOSFETs J. Ortiz Gonzalez, O. Alatise School of Engineering, University of Warwick, Coventry, United Kingdom
11:30	F2-3 #46	Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide A.N. Tallarico^a, S. Reggiani^a, P. Magnone^b, G. Croce^c, R. Depetro^c, P. Gattari^c, E. Sangiorgi^a, C. Fiegna^a ^aARCES-DEI, University of Bologna, Cesena, Italy, ^bDTG, University of Padova, Vicenza, Italy, ^cTechnology R&D, STMicroelectronics, Agrate Brianza, Italy
11:50	F2-4 #43	Impact of load pulse duration on power cycling lifetime of chip interconnection solder joints M. Junghaenel, U. Scheuermann SEMIKRON Elektronik GmbH & Co. KG, Germany
12:10	F2-5 #159	Capacitive effects in IGBTs limiting their reliability under short circuit P.D. Reigosa^a, F. Iannuzzo^a, M. Rahimo^b, F. Blaabjerg^a ^aCentre of Reliable Power Electronics (CORPE), Department of Energy Technology, Aalborg University, Pontoppidanstraede 111, 9220 Aalborg, Denmark, ^bABB Switzerland Ltd. Semiconductors, CH-5600 Lenzburg, Switzerland

Session B1		Defect analysis from device to product
		Room Brasilia 2 et 3
chairpersons		A. BRAVAIX V. HUARD
10:50	B1-1 #81	LER and spacing variability on BEOL TDDB using E-field mapping: Impact of field acceleration D. Kocaay^a,b, P.J. Roussel^a, K. Croes^a, I. Ciofi^a, Y. Saad^d, I. De Wolf^a,c ^aimec, Kapeldreef 75, B-3001 Leuven, Belgium, ^bDept. Electrical Engineering, KU Leuven, B-3000 Leuven, Belgium, ^cDept. Materials Engineering, KU Leuven, B-3000 Leuven, Belgium, ^dSynopsys LLC, CH-8050 Zurich, Switzerland
11:10	B1-2 #222	Observations on the recovery of hot carrier degradation of hydrogen/deuterium passivated nMOSFETs M. J. De Jong, C. Salm, J. Schmitz MESA+ Institute for Nanotechnology, University of Twente, Enschede, The Netherlands
11:30	B1-3 #189	Carbon-related defects in microelectronics V. Kolkovsky^a, R. Stübner^b, J. Weber^b ^aFraunhofer IPMS, Dresden Maria-Reiche Str. 2, 01109 Dresden, Germany, ^bTechnische Universität Dresden, 01062 Dresden, Germany
11:50	B1-4 #33	Static and dynamic hot carrier accelerated TDDB: Influencing factors and impact on product lifetime R. Duschl^a, A. H. Fischer^a, A. Gratz^b, R. Wiesner^a ^aInfineon Technologies AG, Am Campeon 1-12, 85579 Neubiberg, Germany, ^bInfineon Technologies Dresden GmbH, Königsbrücker Str. 180, 01099 Dresden, Germany

Session E2		Interconnections new failure modes
		Room Brasilia 1
chairpersons		A. GUEDON-GRACIA R. RONGEN
10:50	E2-1 #110	Strength and reliability of low temperature transient liquid phase bonded CuSnCu interconnects M. Brincker^a, S. Söhl^b, R. Eisele^b, V.N. Popok^a ^aDepartment of Physics and Nanotechnology, Aalborg University, Skjernvej 4A, 9220 Aalborg, Denmark, ^bDepartment of Mechatronics, University of Applied Sciences Kiel, Grenzstraße 5, 24149 Kiel, Germany
11:10	E2-2 #104	Protective nanometer films for reliable Cu-Cu connections T. Berthold^a,b, G. Benstetter^a, W. Frammelsberger^a, M. Bogner^a, R. Rodríguez^b, M. Nafría^b ^aDeggendorf Institute of Technology, Dieter-Görlitz-Platz 1, 94469 Deggendorf, Germany, ^bUniversitat Autònoma de Barcelona (UAB), 08193 Bellaterra, Barcelona, Spain
11:30	E2-3 #90	XRD and ToF-SIMS study of intermetallic void formation in Cu-Sn micro-connects G. Ross^a, V. Vuorinen^a, M. Krause^b, S. Reissaus^b, M. Petzold^b, M. Paulasto-Kröckel^a ^aDepartment of Electrical Engineering and Automation, Aalto University, Finland, ^bFraunhofer Institute for Microstructure of Materials and Systems IMWS, Halle (Saale), Germany
11:50	E2-4 #30	New ESD challenges in RFID manufacturing P. Jacob^a,b, U. Thiemann^b ^aEmpa Swiss Fed Labs for Materials Testig and Research, CH-860 Dübendorf, Switzerland, ^bEM Microelectronic Marin, CH-2074 Marin, Switzerland
12:10	E2-5 #199	SiC power devices packaging with a short-circuit failure mode capability I. Dchar^a, C. Buttay^b, H. Morel^b ^aPower Electronics, SuperGrid Institute, Villeurbanne, France, ^bUniversité de Lyon, CNRS, INSA-Lyon, Laboratoire AMPÈRE, UMR 5005, F-69621 Villeurbanne, France

12:30		Lunch

Session F3		Power devices & modules
		Auditorium BRISBANE
chairpersons		P. TOUNSI L. THEOLIER
14:00	F3-2 #120	Real-time imaging of temperature distribution inside a power device under a power cycling test A. Watanabe, R. Nagao, I. Omura Department of Electrical Engineering/Electronics, Kyushu Institute of Technology, 1-1 Sensui, Tobata, Kitakyushu, 804-8550, Japan
14:20	F3-3 #194	Extraction of dynamic avalanche during IGBT turn off S. Geissmann, L. D. Michielis, C. Corvasce, M. Rahimo, M. Andenna ABB Semiconductors, Switzerland
14:40	F3-4 #52	Investigation on damaged planar-oxide of 1200V SiC power MOSFETs in non-destructive short-circuit operation F. Boige^a, F. Richardeau^a, D. Trémouilles^b, S. Lefebvre^c, G. Guibaud^d ^aLAPLACE, University of Toulouse, CNRS, INPT, UPS, Toulouse, France, ^bLAAS-CNRS, University of Toulouse, CNRS, Toulouse, France, ^cSATIE, CNAM, CNRS, ENS Cachan, Cachan, France, ^dTHALES Communications & Security, ITEC Lab, CNES, Toulouse, France
15:00	F3-5 #98	Mechanisms of power module source metal degradation during electro-thermal aging R. Ruffilli^a,c, M. Berkani^b, P. Dupuy^c, S. Lefebvre^b, Y. Weber^c, M. Legros^a ^aCEMES-CNRS, Université de Toulouse, 29 rue J. Marvig, 31055 Toulouse, France, ^bLaboratoire SATIE, ENS-Cachan, 61 Avenue du Président Wilson, 94235 Cachan, France, ^cNXP Semiconductors France SAS, 134 Avenue du Général Eisenhower, 31100 Toulouse, France
15:20	F3-6 #148	Aging sensors for on-chip metallization of integrated LDMOS transistors under cyclic thermo-mechanical stress M. Ritter^a, M. Pfost^b ^aRobert Bosch Center for Power Electronics, Reutlingen University, Reutlingen, Germany, ^bChair of Energy Conversion, TU Dortmund University, Dortmund, Germany

Session B2		Circuit reliabiliity analysis
		Room Brasilia 2 et 3
chairpersons		A. BRAVAIX V. HUARD
14:00		Invited paper Reconsideration of TDDB Reliability of Gate Dielectrics: Mechanisms and Statistics K. Okada TowerJazz Panasonic Semiconductor (TPSCo), Japan
14:40	B2-1 #179	A Probe-based SEU Detection Method for SRAM-based FPGAs L. Sterpone Politecnico di Torino
15:00	B2-2 #111	Impact of aging on the soft error rate of 6T SRAM for planar and bulk technologies T. Rousselin^a, G. Hubert^b, D. Régis^a, M. Gatti^a, A. Bensoussan^c ^aThales Avionics, Merignac, France, ^bThe French Aerospace Lab (ONERA), Toulouse, France, ^cIRT Saint-Exupéry, Toulouse, France
15:20	B2-3 #10	The improvement of HEIP immunity using STI engineering at DRAM S. Han, Y. Lee, Y. Kim, J. Park, J. Lim, S. Yamada, H. Hong, K. Lee, G. Jin, E. Jung DRAM Technology Development Team, Semiconductor R&D Center, Samsung Electronics Co. Ltd., San#16, Banweol-Dong, Hwaseong City, Gyeonggi-Do 445-701, Republic of Korea
15:40	B2-4 #54	Analysis of ageing effects on ARTIX7 XILINX FPGA M. Slimani, K. Benkalaia, L. Naviner LTCI, Télécom ParisTech, Université Paris-Saclay, 75013 Paris, France

14:40		Exhibitors flash presentations Room Brasilia 1

16:00		Coffee Break

Poster Session
16:20		See below for detailled programme

Wednesday, September 27


Session C1		Failure Analysis
		Auditorium BRISBANE
chairpersons		O. CREPEL F. ALTMANN
08:30		Invited paper Technologies for Heterogeneous Integration - Challenges and chances for fault isolation C. Boit Technische Universität Berlin, Einsteinufer 19 Sekr. E4, 10587 Berlin, Germany
09:10	C1-1 #102	Lock-in thermal laser stimulation for non-destructive failure localization in 3-D devices K.J.P. Jacobs^a,b, T. Wang^a, M. Stucchi^a, M. Gonzalez^a, K. Croes^a, I. De Wolf^a,b, E. Beyne^a ^aImec, Kapeldreef 75, B-3001 Leuven, Belgium, ^bKU Leuven, Dept. Materials Engineering, B-3001 Leuven, Belgium
09:30	C1-2 #103	Circuit Simulation Assisting Physical Fault Isolation for Effective Root Cause Analysis M. Boostandoost, D. Gräfje, F. Pop Dialog Semiconductor
09:50	C1-3 #119	Effective scan chain failure analysis method E. Auvray^a, P. Armagnat^a, L. Saury^a, M. Jothi^b, M. Brügel^c ^aSTMicroelectronics, Grenoble, France, ^bSynopsys, Italy, ^cSynopsys Germany
10:10	C1-4 #123	Practical quantitative scanning microwave impedance microscopy O. Amster^a, F. Stanke^a, S. Friedman^a, Y. Yang^a, S.J. Dixon-Warren^b, B. Drevniok^b ^aPrimeNano, Inc., 8701 Patrick Henry Dr., Bidg 8, Santa Clara, CA 95054, USA, ^bTechInsights, 1891 Robertson Road, Ottawa, Ontario K2H 5B7, Canada

		ECPE Workshop: Packaging & Reliability for Power Devices
09:10		Room Brasilia 2 et 3

		Photonic Workshop
09:10		Room Brasilia 1

10:30		Coffee Break

Session C2		Failure Analysis
		Auditorium BRISBANE
chairpersons		O. CREPEL K. JACOBS
10:50	C2-1 #36	Determination of doping type by calibrated capacitance scanning microwave microscopy S. Hommel^a, N. Killat^a, A. Altes^a, T. Schweinboeck^a, F. Kreupl^b ^aInfineon Technologies AG, Am Campeon 1-12, 85579 Neubiberg, Germany, ^bDepartment of Hybrid Electronic Systems, Technical University of Munich, Arcisstraße 21, 80333 Munich, Germany
11:10	C2-2 #40	From diffusive in-plane to ballistic out-of-plane heat transport in thin non-crystalline films R. Heiderhoff, T. Haeger, K. Dawada, T. Riedl University of Wuppertal, Institute of Electronic Devices, Rainer-Gruenter-Str. 21, 42119 Wuppertal, Germany
11:30	C2-3 #172	Simulation of the thermal stress induced by CW 1340nm laser on 28nm advanced technologies M. Penzes^a, S. Dudit^a, F. Monsieur^a, L. Silvestri^b, F. Nallet^b, D. Lewis^c, P. Perdu^d,e ^aSTMicroelectronics, Crolles, France, ^bSynopsys Switzerland LLC, 71597 Thurgauerstrasse 40, Switzerland, ^cIMS Laboratory, Talence, France, ^dCNES, Toulouse, France, ^eTemasek Lab at NTU, Singapore
11:50	C2-4 #185	Optical interaction in active analog circuit elements I. Vogt^a, T. Nakamura^b, C. Boit^a ^aSemiconductor Devices, Berlin University of Technology (TUB), Sekr. E4, Einsteinufer 19, 10587 Berlin, Germany, ^bHamamatsu Photonics KK, 325-6, Sunayama-cho, Naka-ku, Hamamatsu, Shizuoka Pref. 430-8587, Japan
12:10	C2-5 #203	Study of GHz-SAM sensitivity to delamination in BEOL layers A. Khaled^a,b, L. Ključar^a,b, S. Brand^c, M. Kögel^c, R. Aertgeerts^d, R. Nicasy^d, I. De Wolf^a,b ^aFac. Engineering, Department Materials Science, KU Leuven, 3000 Leuven, Belgium, ^bimec, Kapeldreef 75, 3000 Leuven, Belgium, ^cFraunhofer Institute for Microstructure of Materials and Systems IMWS, 06120 Halle, Germany, ^dPhysics Department, KU Leuven, 3000 Leuven, Belgium

		Workshop:Emerging challenges for a built-in reliability in innovative automotive ICs"
10:50		Room Brasilia 2 et 3

		Photonic Workshop
10:50		Room Brasilia 1

12:30		Lunch

Session G1		Photonic devices
		Auditorium BRISBANE
chairpersons		M. VANZI C. AUPETIT-BERTHELEMOT
14:00		Invited paper Reliability and Qualification of Microphotonics for Space Applications - A New Challenge I. Mckenzie ESTEC-European Space Agency, Noordwijck, The Netherlands
14:40	G1-1 #198	Understanding the degradation processes of GaN based LEDs submitted to extremely high current density N. Renso, M. Meneghini, M. Buffolo, C. De Santi, G. Meneghesso, E. Zanoni Department of Information Engineering, University of Padova, Padova, Italy
15:00	G1-2 #12	Characterisation of defects generated during constant current InGaN-on-silicon LED operation R.I. Made^a, Y. Gao^a,b, G.J. Syaranamual^a,b, W.A. Sasangka^a, L. Zhang^a, X. S. Nguyen^a, Y.Y. Tay^b,c, J.S. Herrin^c, C.V. Thompson^a,d, C.L. Gan^a,b ^aLow Energy Electronic Systems, Singapore-MIT Alliance for Research and Technology, Campus for Research Excellence and Technological Enterprise (CREATE), 1 CREATE Way, 138602, Singapore, ^bSchool of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore, ^cFacility for Analysis, Characterisation, Testing and Simulation, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore, ^dDepartment of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139,USA
15:20	G1-3 #129	Influence of air pollutants on the lifetime of LEDs and analysis of degradation effects A. Zibold, M. Dammann, R. Schmidt, H. Konstanzer, M. Kunzer Fraunhofer Institute for Applied Solid State Physics, Freiburg, Germany
15:40	G1-4 #167	Failure analysis of projected capacitance touch panel liquid crystal displays – Two case studies J. Lu, Z. Cao, C. Huang, K. Xiao, A. Street, Y. Dai Huawei Technologies Company Ltd, Bantian, Longgang District, Shenzhen, PR China

Session A1		Q & R assessment
		Room Brasilia 2 et 3
chairperson		N. STOJADINOVIC
14:40	A1-1 #224	Reliability-oriented environmental thermal stress analysis of fuses in power electronics A.S. Bahman^a, F. Iannuzzo^a, T. Holmgaard^b, R.Ø. Nielsen^b, F. Blaabjerg^a ^aCenter of Reliable Power Electronics (CORPE), Department of Energy Technology, Aalborg University, Pontoppidanstraede 101, DK-9220 Aalborg, Denmark, ^bGrundfos Holding A/S, Poul Due Jensens Vej 7, DK-8850 Bjerringbro, Denmark
15:00	A1-2 #168	Reliability assessment platform for the power semiconductor devices – Study case on 3-phase grid-connected inverter application I. Vernica^a, K. Ma^b, F. Blaabjerg^a ^aDepartment of Energy Technology, Aalborg University, Aalborg, Denmark, ^bSchool of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, China
15:20	A1-3 #140	Evaluation of effective stress times and stress levels from mission profiles for semiconductor reliability A. Hirler^a, J. Biba^a, A. Alsioufy^a,b, T. Lehndorff^a,b, T. Sulima^a, H. Lochner^b, U. Abelein^c, W. Hansch^a ^aUniversität der Bundeswehr München, Werner-Heisenberg-Weg 39, 85577 Neubiberg, Germany, ^bAUDI AG, Auto-Union-Straße 1, 85045 Ingolstadt, Germany, ^cInfineon Technologies AG, Am Campeon 1-12, 85579 Neubiberg, Germany
15:40	A1-4 #223	Improved and accurate physics-of-failure (PoF) methodology for qualification and lifetime assessment of electronic systems A.B. Temsamani^a, S. Kauffmann^a, Y. Descas^a, B. Vandevelde^b, F. Zanon^b, G. Willems^b ^aFlanders Make, Oude Diestersebaan 133, Lommel, Belgium, ^bimec, Kapeldreef 75, Leuven, Belgium

		Wide Bandgap Workshop
14:40		Room Brasilia 1

16:00		Coffee Break

Session G2		Photonic devices
		Auditorium BRISBANE
chairpersons		M. VANZI C. AUPETIT-BERTHELEMOT
16:20	G2-1 #205	Degradation of InGaN-based MQW solar cells under 405nm laser excitation C. De Santi^a,b, M. Meneghini^a, A. Caria^a, E. Dogmus^c, M. Zegaoui^c, F. Medjdoub^c, E. Zanoni^a, G. Meneghesso^a ^aDepartment of Information Engineering, University of Padova, via Gradenigo 6/B, Padova 35131, Italy, ^bCentro Giorgio Levi Cases, University of Padova, Via Marzolo 9, 35131 Padova, Italy, ^cIEMN-CNRS, Avenue Poincaré CS 60069, 59652 Villeneuve d'Ascq, France
16:40	G2-2 #135	Practical optical gain by an extended Hakki-Paoli method M. Vanzi^a, G. Marcello^a, G. Mura^a, G. Le Galès^b, S. Joly^b, Y. Deshayes^b, L. Bechou^b ^aUniversity of Cagliari DIEE Cagliari, Italy, ^bLaboratoire IMS, Université de Bordeaux, France
17:00	G2-3 #197	Long-term degradation of InGaN-based laser diodes: Role of defects D. Monti^a, M. Meneghini^a, C. De Santi^a,b, G. Meneghesso^a, E. Zanoni^a, A. Bojarska^c, P. Perlin^c,d ^aDepartment of Information Engineering, University of Padova, Via Gradenigo 6/B, 35131 Padova, Italy, ^bCentro Giorgio Levi Cases, University of Padova, Via Marzolo 9, 35131 Padova, Italy, ^cInstitute of High Pressure Physics, “Unipress” Sokolowska 29/37 01-142, Warsaw, Poland, ^dTopGaN Limited, Sokolowska 19/37 01-142, Warsaw, Poland
17:20	G2-4 #45	Thermomechanical degradation of single and multiple quantum well AlGaAs/GaAs laser diodes J. Souto, J.L. Pura, A. Torres, J. Jiménez GdS Optronlab, Ed. LUCIA, Paseo de Belén, s/n, Universidad de Valladolid, 47011 Valladolid, Spain

Session A2		Q & R assessment
		Room Brasilia 2 et 3
chairperson		N. STOJADINOVIC
16:20	A2-1 #20	Analysis of errors in estimating wearout characteristics of time-dependent dielectric breakdown using system-level accelerated life test D.-H. Kim, L. Milor School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA
16:40	A2-2 #113	Multi-Poisson process analysis of real-time soft-error rate measurements in bulk 65nm and 40nm SRAMs S. Moindjie^a,b, J.L. Autran^a,b, D. Munteanu^a,b, G. Gasiot^b,c, P. Roche^b,c ^aAix Marseille Univ, Univ Toulon, CNRS, IM2NP (UMR 7334), Marseille, France, ^bSTMicroelectronics, Crolles, France, ^cRadiation Effects and Electrical Reliability (REER) Joint Laboratory, AMU-CNRS-ISEN-STMicroelectronics, France
17:00	A2-3 #178	A new approach for Total Ionizing Dose effect analysis on Flash-based FPGA Q. Zhang, S. Azimi, G. La Vaccara, L. Sterpone, B. Du CAD Group, Dipartimento di Automatica e Informatica, Politecnico di Torino, Torino, Italy
17:20	A2-4 #115	A row hammer pattern analysis of DDR2 SDRAM M. Versen^a, W. Ernst^b, P. Gulati^a ^aUniversity of Applied Sciences Rosenheim, Rosenheim, Germany, ^bSiemens AG, Amberg, Germany
17:40	A2-5 #68	Method for evaluation of transient-fault detection techniques R.A. Camponogara Viera^a,b,c,1, R. P. Bastos^a, J.-M. Dutertre^b, P. Maurine^c, R. I. Jadue^a ^aUniv. Grenoble Alpes, CNRS, TIMA, Grenoble, France, ^bIMT Mines Saint-Etienne, Centre CMP, Equipe Commune CEA Tech - Mines Saint-Etienne, F-13541 Gardanne, France, ^cLIRMM, CNRS, UMR N5506, Montpellier, France

		Wide Bandgap Workshop
16:20		Room Brasilia 1

20:00		Gala dinner at CAPC contemporary art museum

Thursday, September 28


Session A3		Q & R assessment
		Auditorium BRISBANE
chairperson		N. STOJADINOVIC
08:50	A3-1 #214	Study of the impact of electromigration on integrated circuit performance and reliability at design level R.O. Nunes, R.L. De Orio School of Electrical and Computer Engineering (FEEC), University of Campinas (UNICAMP), Av. Albert Einstein 400 – Cid. Univ. Zeferino Vaz, 13083-852 Campinas, SP, Brazil
09:10	A3-2 #137	Front-end of line and middle-of-line time-dependent dielectric breakdown reliability simulator for logic circuits K. Yang, T. Liu, R. Zhang, D.-H. Kim, L. Milor School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332, United States
09:30	A3-3 #174	Analysis of time-dependent dielectric breakdown induced aging of SRAM cache with different configurations R. Zhang, T. Liu, K. Yang, L. Milor School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA
09:50	A3-4 #74	Characterization of Low Drop-Out during ageing and design for yield R. Lajmi^a,b, F. Cacho^a, E. Lauga Larroze^b, S. Bourdel^b, P. Benech^b, V. Huard^a, X. Federspiel^a ^aSTMicroelectronics, 850 rue Jean Monnet, 38926 Crolles, France, ^bIMEP-LAHC–Univ. Grenoble Alpes. CNRS, F-38000 Grenoble, France
10:10	A3-5 #209	Transient analysis of latent damage formation in SMD capacitors by Transmission Line Pulsing (TLP) D. Helmut^a,b, G. Wachutka^b, G. Groos^a ^aUniversity of the Federal Armed Forces Munich, Werner-Heisenberg-Weg 39, 85577 Neubiberg, Germany, ^bChair for Physics of Electrotechnology, Technical University of Munich, Munich, Germany

Session I1		Ionising Radiation
		Room Brasilia 2 et 3
chairpersons		P. GALY T. DUBOIS
09:10	I1-1 #85	Analyzing the impact of radiation-induced failures in flash-based APSoC with and without fault tolerance techniques at CERN environment L.A. Tambara^a, E. Chielle^a, F.L. Kastensmidt^a, G. Tsiligiannis^b, S. Danzeca^b, M. Brugger^b, A. Masi^b ^aInstituto de Informática, PGMICRO, Universidade Federal do Rio Grande do Sul (UFRGS), Porto Alegre, Brazil, ^bEuropean Organization for Nuclear Research (CERN), Meyrin, Switzerland
09:30	I1-2 #184	A calculation method to estimate single event upset cross section F. Wrobel^a, A.D. Touboul^a, V. Pouget^a, L. Dilillo^b, J. Boch^a, F. Saigné^a ^aUniversité de Montpellier, UMR-CNRS 5214, France, ^bLaboratoire d'Informatique, de Robotique et de Microélectronique de Montpellier (LIRMM), France
09:50	I1-3 #190	Structural pattern extraction from asynchronous two-photon laser fault injection using spectral analysis V. Pouget^a, S. Jonathas^b, R. Job^a, J.R. Vaillé^a, F. Wrobel^a, F. Saigné^a ^aIES, CNRS, University of Montpellier, 34095 Montpellier, France, ^bPULSCAN, 13 av de la Madeleine, 33170 Gradignan, France
10:10	I1-4 #69	Evaluation of heavy-ion impact in bulk and FDSOI devices under ZTC condition W.E. Calienes^a, Y.Q. De Aguiar^a, C. Meinhardt^b, A. Vladimirescu^c, R. Reis^a ^aInstituto de Informática, PGMicro/PPGC, Universidade Federal do Rio Grande do Sul, Porto Alegre, RS, Brazil, ^bCentro de Ciências Computacionais, PPGComp, Universidade Federal do Rio Grande, Rio Grande, RS, Brazil, ^cInstitut Supérieur d'Electronique de Paris, Microelectronics Laboratory, Paris, France

		EFUG Workshop
09:10		Room Brasilia 1

10:30		Coffee Break

Session D1		SiC devices: from material to system
		Auditorium BRISBANE
chairpersons		N. MALBERT M. MENEGHINI
10:50		Invited paper A review of Vth instabilities in GaN MISHEMTs C. Ostermaier Infineon Villach
11:30	D1-1 #192	Trade-off analysis of the p-base doping on ruggedness of SiC MOSFETs B. Kakarla, S. Nida, J. Mueting, T. Ziemann, I. Kovacevic-Badstuebner, U. Grossner Advanced Power Semiconductor Laboratory, ETH Zurich, Physikstrasse 3, 8092 Zurich, Switzerland
11:50	D1-2 #142	A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis L. Ceccarelli, P.D. Reigosa, F. Iannuzzo, F. Blaabjerg Center of Reliable Power Electronics, Department of Energy Technology, Aalborg University, Pontoppidanstræde 101, 9220 Aalborg, Denmark
12:10	D1-3 #53	Thermal design and characterization of a modular integrated liquid cooled 1200V-35A SiC MOSFET bi-directional switch P. Cova^a, A.M. Aliyu^b, A. Castellazzi^b, D. Chiozzi^a, N. Delmonte^a, P. Lasserre^c, N. Pignoloni^a ^aDepartment of Engineering and Architecture, University of Parma, Italy, ^bPEMC Group, University of Nottingham, Nottingham, UK, ^cPRIMES Association, Tarbes, France

Session I2		Ionising Radiation
		Room Brasilia 2 et 3
chairpersons		P. GALY T. DUBOIS
10:50	I2-1 #207	Influence of preliminary irradiation by neutrons on emissive power changing of IR-LEDs during operation A. Gradoboev, A. Simonova, K. Orlova National Research Tomsk Polytechnic University
11:10	I2-2 #64	Evaluation of radiation-induced soft error in majority voters designed in 7nm FinFET technology Y.Q. De Aguiar^a, L. Artola^b, G. Hubert^b, C. Meinhardt^c, F.L. Kastensmidt^a, R.A.L. Reis^a ^aInstituto de Informática, PGMicro/PPGC, Universidade Federal do Rio Grande do Sul, Porto Alegre, Brazil, ^bONERA, 2 Avenue E. Belin, 31055 Toulouse, France, ^cCentro de Ciências Computacionais, PPGComp, Universidade Federal do Rio Grande, Rio Grande, Brazil
11:30	I2-3 #108	A low-level software-based fault tolerance approach to detect SEUs in GPUs' register files M. Gonçalves^a, M. Saquetti^a, F. Kastensmidt^b, J. R. Azambuja^b ^aCentro de Ciências Computacionais, Universidade Federal do Rio Grande (FURG), Rio Grande, RS, Brazil, ^bInstituto de Informática, Universidade Federal do Rio Grande do Sul (UFRGS), Porto Alegre, RS, Brazil

		EFUG Workshop
10:50		Room Brasilia 1

12:30		Lunch

Session D2		Millimeter wave and Power devices
		Auditorium BRISBANE
chairpersons		N. MALBERT M. MENEGHINI
14:00	D2-1 #125	Field and hot electron-induced degradation in GaN-based power MIS-HEMTs A. Tajalli^a, M. Meneghini^a, I. Rossetto^a, P. Moens^b, A. Banerjee^b, E. Zanoni^a, G. Meneghesso^a ^aDepartment of Information Engineering, University of Padova, Padova, Italy, ^bON Semiconductor, Oudenaarde, Belgium
14:20	D2-2 #27	Improved reliability of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) with high density silicon nitride passivation W.A. Sasangka^a, G.J. Syaranamual^a,b, Y. Gao^a,b, R. I Made^a, C.L. Gan^a,b, C.V. Thompson^a,c ^aLow Energy Electronic Systems, Singapore-MIT Alliance for Research and Technology, Singapore 138602, Singapore, ^bSchool of Material Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore, ^cDepartment of Material Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
14:40	D2-3 #28	Reliability of 100nm AlGaN/GaN HEMTs for mm-wave applications M. Dammann^a, M. Baeumler^a, V. Polyakov^a, P. Brückner^a, H. Konstanzer^a, R. Quay^a, M. Mikulla^a, A. Graff^b, M. Simon-Najasek^b ^aFraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, D-79108 Freiburg, Germany, ^bFraunhofer Institute of Microstructure of Materials and Systems, , Walter-Hülse-Strasse 1, D-06120 Halle, Germany
15:00	D2-4 #210	Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level I. Rossetto^a, M. Meneghini^a, E. Canato^a, M. Barbato^a, S. Stoffels^b, N. Posthuma^b, S. Decoutere^b, A.N. Tallarico^c, G. Meneghesso^a, E. Zanoni^a ^aDepartment of Information Engineering, University of Padova, Padova, Italy, ^bimec, Kapeldreef 75, 3001 Leuven, Belgium, ^cARCES-DEI, University of Bologna, Cesena, Italy

Session I3		EMC/ESD/EFT
		Room Brasilia 2 et 3
chairpersons		P. GALY T. DUBOIS
14:00	I3-1 #169	Out-of-band disturbance of mm-wave EMI on RF front-ends P. Payet, M. Guery, J. Raoult, L. Chusseau IES, UMR 5214, Université de Montpellier, 860 rue St Priest, 34095 Montpellier, France
14:20	I3-2 #134	Effects of ageing on the conducted immunity of a voltage reference: Experimental study and modelling approach S. Hairoud-Airieau^a,b, G. Duchamp^a, T. Dubois^a, J.-Y. Delétage^a, A. Durier^b, H. Frémont^a ^aLaboratoire IMS, University of Bordeaux, Talence, France, ^bIRT Saint-Exupéry, Toulouse, France
14:40	I3-3 #122	Exploration of robustness limits and ESD EMI impact in a protection device for advanced CMOS technology P. Galy^a, W. Schoenmaker^b ^aSTMicroelectronics, 850 rue Jean Monnet, 38926 Crolles, France, ^bMAGWEL NV, Vital Decosterstraat 44 bus 27, 1B-3000 Leuven, Belgium
15:00	I3-4 #121	Prediction of LIN communication robustness against EFT events using dedicated failure models F. Escudié, F. Caignet, N. Nolhier, M. Bafleur LAAS-CNRS, Université de Toulouse, CNRS, UPS, Toulouse, France

15:20		Coffee Break

Session D3		High power GaN transistors
		Auditorium BRISBANE
chairpersons		N. MALBERT M. MENEGHINI
15:40	D3-1 #175	Exploring the thermal limit of GaN power devices under extreme overload conditions F.P. Pribahsnik^a, M. Nelhiebel^a, M. Mataln^a, M. Bernardoni^a, G. Prechtl^b, F. Altmann^c, D. Poppitz^c, A. Lindemann^d ^aKAI GmbH, Austria, ^bInfineon Technologies Austria AG, Austria, ^cFraunhofer Institute for Microstructure of Materials and Systems IMWS, Germany, ^dOtto-von-Guericke-University Magdeburg, Germany
16:00	D3-2 #8	Relation between UIS withstanding capability and I-V characteristics in high-voltage GaN-HEMTs W. Saito, T. Naka Toshiba Corp. Storage & Electronic Devices Solutions Company, 1-1-1 Shibaura, Tokyo 105-8001, Japan
16:20	D3-3 #220	Experimental study of the instabilities observed in 650V enhancement mode GaN HEMT during short circuit C. Abbate, G. Busatto, A. Sanseverino, D. Tedesco, F. Velardi DIEI, University of Cassino and Southern Lazio, Via di Biasio, 43, 03043 Cassino, Italy
16:40	D3-4 #114	Electrical and thermal failure modes of 600V p-gate GaN HEMTs T. Oeder^a,b, A. Castellazzi^b, M. Pfost^a ^aChair of Energy Conversion, TU Dortmund, Emil-Figge-Straße 68, Dortmund 44227, Germany, ^bPower Electronics, Machines and Control Group (PEMC), University of Nottingham, Nottingham NG7 2RD, United Kingdom

Session I4		ESD/EFT
		Room Brasilia 2 et 3
chairpersons		P. GALY T. DUBOIS
15:40	I4-1 #228	New triggering-speed-characterization method for diode-triggered SCR using TLP M. Mahane^a,b, D. Trémouilles^b, M. Bafleur^b, B. Thon^a, M. Diatta^a, L. Jaouen^a ^aSTMicroelectronics Tours SAS, 37100 Tours, France, ^bLAAS-CNRS, Université de Toulouse, CNRS, UPS, 31400 Toulouse, France
16:00	I4-2 #211	TIM, EMMI and 3D TCAD analysis of discrete-technology SCRs C. Fleury^a, G. Notermans^b, H.-M. Ritter^b, D. Pogany^a ^aInstitute of Solid State Electronics, TU Wien, Floragasse 7, 1040 Vienna, Austria, ^bNexperia Germany GmbH, Stresemannallee 101, 22529 Hamburg, Germany

17:00		Announcement of ESREF 2017 Best Paper Awards Conference closing Auditorium BRISBANE

Poster Papers

	AP-2 #31	A very unusual transistor failure, caused by a solenoid P. Jacob, R. Furrer Empa, Swiss Federal Laboratories for Materials Testing and Research, CH-8600 Dübendorf, Switzerland
	AP-3 #130	Uncertainty quantification in nanowire growth modeling – A precursor to quality semiconductor nanomanufacturing C. I. Ossai^a, X. Xu^b, Q. Yang^b, N. Raghavan^a ^aEngineering Product Development Pillar, Singapore University of Technology and Design, 487372, Singapore, ^bState Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, China
	AP-4 #156	Lifetime and failure analysis of perovskite-based ceramic NTC thermistors by thermal cycling and abrasion combined stress J.-S. Jeong^a,c, W.-K. Lee^b, C.-K. Lee^b, J. Choi^c ^aElectronic Convergence Material & Device Research Center, Korea Electronics Technology Institute (KETI), 25, Saenari-ro, Bundang-gu, Seongnam-City, Gyeonggi-Do, Republic of Korea, ^bLATTRON Co., Ltd, 182, Daedeok-daero 1448, Daedeok-gu, Daejeon, Republic of Korea, ^cDepartment of Electrical and Computer Engineering, University of Seoul, Dongdaemun-gu, Seoul-City, Republic of Korea
	AP-5 #213	Converter-level FEM simulation for lifetime prediction of an LED driver with improved thermal modelling H. Niu^a, H. Wang^b, X. Ye^a, S. Wang^a, F. Blaabjerg^b ^aSchool of Electrical Engineering and Automation, Harbin Institute of Technology, Harbin, China, ^bDepartment of Energy Technology, Aalborg University, Aalborg, Denmark
	AP-6 #221	Uneven temperature effect evaluation in high-power IGBT inverter legs and relative test platform design H. Luo^a,b, W. Li^b, X. He^b, F. Iannuzzo^a, F. Blaabjerg^a ^aDepartment of Energy Technology, Aalborg University, Denmark, ^bCollege of Electrical Engineering, Zhejiang University, PR China
	BP-1 #94	Modelling of initial fast charge loss mechanism for logic embedded non-volatile memories J. Wu, C. Li, H. Wang, J. Li, L. Zheng College of Electronic Science and Engineering, National University of Defense Technology, Changsha, China
	BP-2 #163	Identification of the generation/rupture mechanism of filamentary conductive paths in ReRAM devices using oxide failure analysis A. Rodriguez-Fernandez^a, C. Cagli^b, L. Perniola^b, J. Suñé^a, E. Miranda^a ^aDepartament d'Enginyeria Electrònica, Universitat Autònoma de Barcelona, Cerdanyola del Vallès, Spain, ^bCEA, LETI, MINATEC Campus, Grenoble, France
	BP-3 #95	Application of Scanning Capacitance Microscopy on SOI device with wafer edge low yield pattern C.Q. Chen, G.B. Ang, P.T. Ng, F. Rivai, S.P. Neo, D. Nagalingam, K.H. Yip, J. Lam, Z.H. Mai Product, Test and Failure Analysis, Globalfoundries, Singapore
	CP-1 #17	Characterization of HTRB stress effects on SiC MOSFETs using photon emission spectral signatures N. Moultif, E. Joubert, M. Masmoudi, O. Latry Normandy University, University of Rouen, Groupe Physique des Matériaux, UMR CNRS 6634, Site de Madrillet, Avenue de l'Université – B.P 12, St. Etienne de Rouvray 76801, France
	CP-2 #22	Pattern image enhancement by automatic focus correction A. Boscaro^a,b, S. Jacquir^a, K. Sanchez^b, P. Perdu^b,c, S. Binczak^a ^aLe2i, FRE CNRS 2005, Arts et Métiers, Univ. Bourgogne Franche-Comté, Dijon, France, ^bCentre National d’Etudes Spatiales (CNES), Toulouse, France, ^cTemasek Laboratories, Nanyang Technological University, 50 Nanyang Drive, Singapore
	CP-3 #38	Failure analysis methodology on donut pattern failure due to photovoltaic electrochemical effect S.P. Neo, A.C.T. Quah, G.B. Ang, D. Nagalingam, H.H. Ma, S.L. Ting, C.W. Soo, C.Q. Chen, Z.H. Mai, J.C. Lam Failure Analysis Group, PTF, Globalfoundries Singapore Pte. Ltd, 60 Woodlands, Industrial Park D Street 2, 738406, Singapore
	CP-4 #79	DC bias dependence of local deep level transient spectroscopy spectrum and quantitative two-dimensional imaging of SiO2/SiC interface trap density N. Chinone², R. Kosugi¹, S. Harada¹, Y. Tanaka¹, H. Okumura¹, Y. Cho² ¹National Institute of Advanced Industrial Science and Technology, ²Tohoku University
	CP-5 #101	Embed SRAM IDDOFF fail root cause identification by combination of device analysis and localized circuit analysis C.Q. Chen, G.B. Ang, P.T. Ng, F. Rivai, H.P. Ng, A.C.T. Quah, A. Teo, J. Lam, Z.H. Mai Product, Test and Failure Analysis, GlobalFoundries, Singapore
	DP-1 #13	Negative bias illumination stress instability in amorphous InGaZnO thin film transistors with ITO local conducting buried layer S. M. Kim^a, M.-S. Kang^b, W.-J. Cho^b, J. T. Park^a ^aDept. of Electronics Eng., Incheon National Univ., Incheon 406-772, Republic of Korea, ^bDept. of Electronic Materials Eng., Kwangwoon Univ., Seoul 139-701, Republic of Korea
	DP-2 #14	Reliability of amorphous InGaZnO TFTs with ITO local conducting buried layer for BEOL power transistors H. J. Kim^a, B. S. Song^a, W.-J. Cho^b, J. T. Park^a ^aDept. of Electronics Eng., Incheon National Univ., Incheon 406-772, Republic of Korea, ^bDept. of Electronic Materials Eng., Kwangwoon Univ., Seoul 139-701, Republic of Korea
	DP-3 #117	High resolution physical analysis of ohmic contact formation at GaN-HEMT devices A. Graff^a, M. Simon-Najasek^a, F. Altmann^a, J. Kuzmik^b, D. Gregušová^b, Š. Haščík^b, H. Jung^c, T. Baur^c, J. Grünenpütt^c, H. Blanck^c ^aFraunhofer Institute for Microstructure of Materials and Systems IMWS, Halle, Germany, ^bInstitute of Electrical Eng. SAS, Bratislava, Slovakia, ^cUnited Monolithic Semiconductors, Ulm, Germany
	DP-4 #149	Gate defects analysis in AlGaN/GaN devices by mean of accurate extraction of the Schottky Barrier Height, electrical modelling, T-CAD simulations and TEM imaging J.G. Tartarin^a, O. Lazar^a, D. Saugnon^a, B. Lambert^b, C. Moreau^c, C. Bouexiere^c, E. Romain-Latu^d, K. Rousseau^d, A. David^e, J.L. Roux^f ^aLAAS-CNRS and Université de Toulouse, Université Paul Sabatier, 31031 Toulouse, France, ^bUnited Monolithic Semiconductors, Villebon-sur Yvette 91140, France, ^cDGA MI, Rennes 35998, France, ^dSERMA Technologies MINATEC BHT, Grenoble 38040, France, ^eBiophy Research, Fuveau 13710, France, ^fCNES, Quality Assurance Directorate Department, Toulouse 31400, France
	DP-5 #173	TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices K. Mukherjee, F. Darracq, A. Curutchet, N. Malbert, N. Labat IMS Laboratory, University of Bordeaux, CNRS UMR 5218, F-33405 Talence, France
	EP-1 #9	Young's modulus of a sintered Cu joint and its influence on thermal stress T. Ishizaki^a, D. Miura^b, A. Kuno^b, K. Hasegawa^b, M. Usui^a, Y. Yamada^b ^aToyota Central R&D Labs., Inc., 41-1, Yokomichi, Nagakute, Aichi 480-1192, Japan, ^bDepartment of Electrical and Electronic Engineering, Daido University, Nagoya, Aichi 457-8530, Japan
	EP-2 #32	Realistic climatic profiles and their effect on condensation in encapsulated test structures representing power modules S. Kremp, O. Schilling Infineon Technologies AG, Max Planck Straße 5, 59581 Warstein, Germany
	EP-3 #160	Die degradation effect on aging rate in accelerated cycling tests of SiC power MOSFET modules H. Luo, N. Baker, F. Iannuzzo, F. Blaabjerg Department of Energy Technology, Aalborg University, Aalborg, Denmark
	EP-4 #183	Influence of ENIG defects on shear strength of pressureless Ag nanoparticle sintered joint under isothermal aging M.-S. Kim, H. Nishikawa Joining and Welding Research Institute, Osaka University, 11-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
	EP-5 #187	Identification of foreign particles in packages of failed products by application of our modified failure analysis flow R. J. Otte, R. F. Fonville, M. D. Knotter NXP Semiconductors, Product Diagnostic Center, Gerstweg 2 (FB0.101), 6534 AE Nijmegen, The Netherlands
	EP-6 #202	Innovative conception of SiC MOSFET-Schottky 3D power inverter module with double side cooling and stacking using silver sintering M. Barrière^a, A. Guédon-Gracia^a, E. Woirgard^a, S. Bontemps^b, F. Le Henaff^c ^aLaboratoire IMS, University of Bordeaux, Talence, France, ^bMicrosemi, Bruges, France, ^cAlpha, NJ, USA
	FP-1 #35	Clamp type built-in current sensor using PCB in high-voltage power modules M. Tsukuda^a,b, K. Nakashima^b, S. Tabata^b, K. Hasegawa^b, I. Omura^b ^aGreen Electronics Research Institute, 1-8 Hibikino, Wakamatsu-ku, Kitakyushu, Japan, ^bKyushu Institute of Technology, 1-1 Sensui-cho, Tobata-ku, Kitakyushu, Japan
	FP-2 #42	Advanced power cycler with intelligent monitoring strategy of IGBT module under test U.M. Choi, F. Blaabjerg, F. Iannuzzo Center of Reliable Power Electronics (CORPE), Department of Energy Technology, Aalborg University, Aalborg, Denmark
	FP-3 #44	Short-circuit robustness test and in depth microstructural analysis study of SiC MOSFET S. Mbarek^a, P. Dherbécourt^a, O. Latry^a, F. Fouquet^b ^aNormandie Univ, UNIROUEN, INSA Rouen, CNRS, GPM UMR CNRS 6634, 76000 Rouen, France, ^bNormandie Univ, UNIROUEN, ESIGELEC, IRSEEM EA 4353, 76000 Rouen, France
	FP-4 #51	Gate leakage-current analysis and modelling of planar and trench power SiC MOSFET devices in extreme short-circuit operation F. Boige, F. Richardeau LAPLACE, University of Toulouse, CNRS, INPT, UPS, France
	FP-5 #66	Failure mechanism analysis of off-state drain-to-source leakage current failure of a commercial 650V discrete GaN-on-Si HEMT power device by accelerated power cycling test S. Song, S. Munk-Nielsen, C. Uhrenfeldt Department of Energy, University of Aalborg, Aalborg, Denmark
	FP-6 #193	Power module thermal cycling tester for in-situ ageing detection P. Pougnet^a,b, G. Coquery^b,c, R. Lallemand^c, A. Makhloufi^d ^aValeo Siemens eAutomotive, Cergy, France, ^bVEDECOM Institute, Versailles, France, ^cIFSTTAR, Versailles, France, ^dINSA, Rouen, France
	FP-7 #229	Fundamental-frequency and load-varying thermal cycles effects on lifetime estimation of DFIG power converter G. Zhang^a, D. Zhou^b, J. Yang^a, F. Blaabjerg^b ^aSchool of Information Science and Engineering, Central South University, Changsha, China, ^bDepartment of Energy Technology, Aalborg University, Aalborg, Denmark
	GP-1 #11	Mechanical stress-induced degradation model of amorphous InGaZnO thin film transistors by strain-initiated defect generation C. Park, I. Yun Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea
	GP-2 #26	Field degradation prediction of potential induced degradation of the crystalline silicon photovoltaic modules based on accelerated test and climatic data W. Oh^a, S. Bae^b, S.-I. Chan^a, H.-S. Lee^b, D. Kim^b, N. Park^a ^aElectronic Convergence Materials & Device Research Center, Korea Electronics Technology Institute, Seongnam 13509, Republic of Korea, ^bDepartment of Materials Science and Engineering, Korea University, Seoul 02841, Republic of Korea
	GP-3 #39	Reliability and failure analysis of solder joints in flip chip LEDs via thermal impedance characterisation J. Magnien^a, L. Mitterhuber^a, J. Rosc^a, F. Schrank^b, S. Hörth^c, L. Goullon^d, M. Hutter^d, S. Defregger^a, E. Kraker^a ^aMaterials Center Leoben Forschung GmbH (MCL), Roseggerstraße 12, A-8700 Leoben, Austria, ^bTridonic Jennersdorf GmbH, Technologiepark 10, A-8380 Jennersdorf, Austria, ^cHäusermann GmbH, Zitternberg 100, A-3571 Gars am Kamp, Austria, ^dFraunhofer-Institut für Zuverlässigkeit und Mikrointegration, Gustav-Meyer-Allee 25, D-13355 Berlin, Germany
	GP-4 #77	Effect of selectively passivated layer on foldable low temperature polycrystalline silicon thin film transistor characteristics under dynamic mechanical stress S. M. Lee, I. Yun Department of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea
	GP-5 #138	Structure variation effects on device reliability of single photon avalanche diodes D. Shin, B. Park, Y. Chae, I. Yun Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea
	HP-1 #100	Second order sigma-delta control of charge trapping for MOS capacitors C. Bheesayagari, S. Gorreta, J. Pons-Nin, M. Domínguez-Pumar Micro and Nano Technologies Group, Electronic Engineering Department, Universitat Politècnica de Catalunya, Jordi Girona 1-3, 08034 Barcelona, Spain
	IP-1 #2	Advanced reliability prediction methods for long-term electromagnetic compatibility analysis H. Huang², F. Canavero², M. Larbi², A. Boyer¹, S. Ben Dhia¹ ¹LAAS-CNRS, ²Politecnico di Torino, Italy
	IP-2 #63	True dose rate physical mechanism of ELDRS effect in bipolar devices V.S. Pershenkov^a, A.S. Petrov^b, A.S. Bakerenkov^a, V.N. Ulimov^b, V.A. Felytsyn^a, A.S. Rodin^a, V.V. Belyakov^a, V.A. Telets^a, V.V. Shurenkov^a ^aNational Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Kashirskoe shosse, 31, Moscow 115409, Russian Federation, ^bResearch Institute of Scientific Instruments, Turayevo, 8, Lytkarino, Moscow Region 140080, Russian Federation
	IP-3 #88	Investigations on the EFT immunity of microcontrollers with different architectures J. Wu^a,b, B. Li^c,d, W. Zhu^b, H. Wang^a, L. Zheng^a ^aCollege of Electronic Science and Engineering, National University of Defense Technology, Changsha, China, ^bTianjin Binhai Civil-military Integrated Innovation Institute, Tianjin, China, ^cInstitute of Microelectronics of Chinese Academy of Sciences, Beijing, China, ^dKey Laboratory of Silicon Device and Technology, Beijing, China
	IP-4 #97	The total ionizing dose response of a DSOI 4Kb SRAM B. Li^a,b, J. Wu^e,f, J. Gao^a,b, Y. Kuang^a,b, J. Li^a,b, X. Zhao^a,b, K. Zhao^d, Z. Han^a,b,c, J. Luo^a,b,c ^aInstitute of Microelectronics of Chinese Academy of Sciences, Beijing, China, ^bKey Laboratory of Silicon Devices and Technology, Chinese Academy of Sciences, Beijing, China, ^cUniversity of Chinese Academy of Sciences, Beijing 100029, China, ^dFudan Microelectronics Group, Shanghai, China, ^eCollege of Electronic Science and Engineering, National University of Defense Technology, Changsha, China, ^fTianjin Binhai Civil-military Integrated Innovation Institute, Tianjin, China
	IP-5 #116	Single-event-transient effects in Junctionless Double-Gate MOSFETs with Dual-Material Gate investigated by 3D simulation D. Munteanu, J.L. Autran, S. Moindjie Aix-Marseille University & CNRS, IM2NP (UMR 7334), Faculté des Sciences – Service 142, Avenue Escadrille Normandie Niémen, F-13397 Marseille Cedex 20, France
	IP-6 #215	Atmospheric Neutron Characterization with Silicon Detectors for Single Event Effect Real-Time Testing S. Moindjie², J.-L. Autran¹, D. Munteanu², T. Saad Saoud³ ¹Aix-Marseille University, ²CNRS-IM2NP, ³IM2NP